| 摘要 |
PURPOSE:To diminish the characteristics fluctuation level in operable circumstances by means of adding radiation irradating process exceeding 10<4> rad. CONSTITUTION:A special process of irradiating radiation exceeding 10<4> rad on overall surface is added to either intermediate or final phase of a production process. In other words, radiation is irradiated corresponding to the required radiation resistant level and the allowable characteritics fluctuation level during the intermediate or final production process of ordinary semiconductor device so that the radiation resistance in the operable circumferences may be upgraded without resorting to any notable alteration in other production processes or device structure.
|
