| 摘要 |
PURPOSE:To improve water-resisting properties and counter ion properties by forming a protective film on the surface of a semiconductor substrate in two-layer structure of a polyimide resin film layer and an silicon nitride film. CONSTITUTION:A semiconductor element 2 such as an N-P-N transistor is shaped to the surface of a semiconductor substrate 1, and a base electrode 6, an emitter electrode 7, a collector electrode 8, a bonding pad 9 and a wiring between semiconductor elements are formed in opening sections in an insulating film 3 through an aluminum evaporation method. A polyimide resin film 4 is shaped onto the surface of the semiconductor substrate 1 as a first surface protective film, and the resin layer on the bonding pad 9 is removed through a photolithographic technique and etching. An silicon nitride film 5 as a second surface protective film is formed onto the surface of the polyimide resin film 4. Accordingly, a semiconductor device has large inhibition action to the intrusion of moisture from the outside. The silicon nitride film 5 has counter ion properties, thus also resisting the semiconductor device against contamination from the outside.
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