| 摘要 |
PURPOSE:To keep the number of corpuscles on a silicon substrate small, by removing a silicon oxide film on the silicon substrate in an aqueous solution of hydrofluoric acid and performing overflow rinsing of the substrate and then forming a clean protective oxide film on the substrate. CONSTITUTION:A silicon substrate 1 is soaked in a hydrofluoric acid process container 2 which is filled with an aqueous solution containing hydrofluoric acid, to remove a silicon oxide film. Pure-water supply valve 3 is then opened to perform overflow rinsing. After the solution of hydrofluoric acid is completely replaced by pure water, a bubbling process of oxygen is performed by means of a bubbler 4 made of Teflon. At the time when effect of oxygen forms a clean thin protective film on the surface of the substrate 1, the substrate 1 is drawn out from the process container 2 to be carried to a shower container 5. Hydrofluoric acid or the like on the substrate 1 is removed by ejecting pure water from a shower nozzle 6. Hence, the number of fine particles on the substrate 1 can be kept small.
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