发明名称 IMAGE SENSOR
摘要 PURPOSE:To obtain a sensor with high sensitivity, high resolution, and low power consumption, by constituting the sensor of a photodiode, a shift the first and the second differential switch groups, and operating the phototransistor in a charge storage mode by each output current of the differential switch groups. CONSTITUTION:Phototransistor arrays 13-1-13-7 are used as detecting elements. In a scanning operation, a current source controlled by the shift register is connected to an electrode on one side of each phototransistor, and an electric charge discharged by a photoelectric current is recharged, and the electrode on the other side of each phototransistor is connected in common, and a video signal output line is constituted in such way. Therefore, no transfer function is required in a video signal, and fast scanning can be realized even in a large image size, thereby it is ultimately preferable to be adopted as the a contact type image sensor. And also, the power consumption is reduced because the shift register by the longitudinal connection of a thyristor, and a coupling tran- sistor is used.
申请公布号 JPS62294372(A) 申请公布日期 1987.12.21
申请号 JP19860138567 申请日期 1986.06.13
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 YAMAGUCHI KAZUFUMI;MURATA TAKAHIKO;YAMAMOTO YASUNAGA
分类号 H04N1/028;H04N5/335;H04N5/357;H04N5/369;H04N5/374;H04N5/378 主分类号 H04N1/028
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