发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To improve the reliability of a lead bonding part, by using dry film resist as a plating mask, and introducing a process, by which the height of a plated bump is made less than the thickness of a resist film. CONSTITUTION:A metallic multilayer films 15 are formed on an electrode pad 3. In order to form a bump, dry film resist 16 is formed on the entire surface of the film 15 by thermocompression bonding. Then, bump metal 17 undergoes electrolytic deposition selectively only on the upper part of the pad 3 by an electrolytic plating method. The thickness of the deposited bump metal in a hole 16a is made less than the thickness of the resist 16. After the deposition of the bump metal, the resist 16 is removed. Therefore, reduction in pad pitch accompanied by the increase in number of the pads, superthin type packaging, further miniaturization of an electronic circuit device and high density can be implemented.</p>
申请公布号 JPS62293649(A) 申请公布日期 1987.12.21
申请号 JP19860136037 申请日期 1986.06.13
申请人 TOSHIBA CORP 发明人 EZAWA HIROKAZU
分类号 H01L21/60 主分类号 H01L21/60
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