| 摘要 |
PURPOSE:To insulate the periphery of the electric connection section of a semiconductor device chip and a wiring board positively by forming a groove, an inner surface of which consists of an insulator, on the wiring board for the three-dimensional wiring of the semiconductor device chip. CONSTITUTION:A wiring layer 5 is shaped to an insulator as a material as a base in a wiring board 1 or a semiconductor, the surface of which is insulated. A first insulating layer 6 is formed onto the surface of the wiring layer 5, the first insulating film 6 in a section 1B to which a bump is shaped is removed, and a second insulating film is formed to sections except the section 18, to which the bump is shaped, and a section as a groove section 1A for erecting an IC chip 2. A conductor buried layer is formed to the section 1B to which the bump is shaped, and a solder bump 4 is formed onto the conductor buried layer. Accordingly, the groove section IA and the solder bump 4 are shaped, and the IC chip 2 is erected to the groove section 1A surrounded by the second insulating layer 7, thus preparing the wiring board 1 capable of completely separating the end section not insulated of the IC chip 2 and a joining section between the wiring board 1 and the IC chip 2. |
