| 摘要 |
PURPOSE:To shorten a process requiring time by forming a transition loop by introducing a forcible transition and selecting a thermal cycle temperature range for inactivating the transition. CONSTITUTION:A GaAs single crystal is grown on an Si substrate, and the growth is interrupted on the way of growing. Then, the temperature of a growing wafer is reduced to the dropping limit temperature of 300 deg.C. Then, this temperature rising and dropping operations are repeated. Thus, the irregular transition existing between a substrate and a compound semiconductor layer and the propagation of the transition due to thermal stress are enclosed in the vicinity of a boundary efficiently in a short time to reduce the transition in a compound semiconductor device active layer forming region of an upper layer. As a result, a process requiring time can be shortened.
|
