HIGH-FREQUENCY SEMICONDUCTOR DEVICE

摘要

PURPOSE:To enable high-frequency characteristics such as input and output impedances at ends of a chip to be determined while obviating the need of assembling them, by arranging surface grounding electrodes connected to an underside electrode of a substrate at the input and output ends of a strip-type transmission line. CONSTITUTION:Input and output matching circuits 1 and 2 are formed integrally on the input and output sides of an FET 3 on the principal surface of a semi- insulating GaAs substrate 4. Surface grounding electrodes 5 are arranged on the opposite sides of the input and output ends of a strip-type transmission line. The electrodes 5 are electrically connected to an underside electrode through a V-shaped groove 6. A surface striptype line electrode 7 is located in the middle of the grounding electrodes 5 and the grounding electrodes 5 are electrically connected to an underside strip-type line electrode 8 through the V-shaped groove 6. Accordingly, an impedance at the input or output end of a chip can be determined by using a highfrequency probe or the like without assembling the chip with a bonding wire but as it is in the condition of a wafer or the chip itself.