| 摘要 |
PURPOSE:To smoothly coat a wiring step by mixing gas for etching the wiring metal in an insulating film forming material gas, and forming a film while etching it. CONSTITUTION:Aluminum wirings 10b are formed through an SiO2 film 10a on a semiconductor substrate 10. Then, one of O2, N2, O, NO, N2 and NH3 is mixed with SiH4 or Si2H6, and an insulating film is superposed by a CVD method by exciting it with a high frequency, a mercury lamp or a laser. For example, the substrate is heated to 300 deg.C by a parallel flat plate type plasma CVD unit, and an SiO2 film 12 is obtained by feeding predetermined amount of SiH4, NO2, CCl4. In this case, aluminum electrodes 11a', 11b' are etched particularly at the corners with CCl4 at the initial time of formation, the step coverage is improved. When an aluminum electrode layer 13 is formed thereon, no disconnection occurs.
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