| 摘要 |
PURPOSE:To prevent failure of an electrode arranged in a Vshaped groove and on the side faces thereof and to prevent breakage of a chip or wafer, by determining characteristics of a strip-type transmission line by a thickness of a second GaAs layer and causing a first GaAs layer to act as an underside conductor. CONSTITUTION:An FET 3 is arranged between an input-side matching circuit 1 and an output-side matching circuit 2. A GaAs substrate on which the FET and a strip-type transmission line are formed is composed of a conducting GaAs layer 10 and a semi-insulating GaAs layer 4 formed continuously on the layer 10. A V-shaped groove 8 is formed through the layer 4 to reach the layer 10. A source electrode S is arranged along the side faces of the V-shaped groove 8 and a source region 7 on the surface are connected to the layer 10 with a low resistance. The layer 10, which is highly doped with an impurity, has a low resistance. The layer 10 and an underside grounding electrode 9 function substantially as an underside electrode for the striptype transmission line.
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