| 摘要 |
PURPOSE:To process a semiconductor device without depositing fuse fragments by covering a fuse formed and exposed on an insulating film of a film material which transmits a laser beam including the vicinity part. CONSTITUTION:A fuse 4 is formed on an insulating film formed on a semiconductor substrate 1, such as a SiO2 film 2, and a semiconductor device protective film 3 on the semiconductor substrate is windowed at the fuse part. Before emitting a laser beam, an organic film or an inorganic film material 5 is formed to cover the semiconductor device including the periphery of the fuse. Then, when a laser beam 6 is emitted to the fuse to cut the fuse, the fragments 7 of the fuse 4 are scattered to the periphery of the fuse cut part. Even if the material 5 is formed of a photoresist, the fragments are retained on the photoresist or in the photoresist so as not to arrive at the lower surface. When the material 5 is eventually separated, the fragments 7 are simultaneously removed from above the semiconductor device.
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