| 摘要 |
PURPOSE:To enable a polysilicon film to grow without cloudy wafer appearance and defective resistance, by baking a semiconductor wafer for a specified time and at a specified temperature before a start of polysilicon growth after the wafer is put into a polysilicon growth device. CONSTITUTION:When polysilicon growth at temperatures of 600-670 deg.C is performed by using SiH4 on the surface of a semiconductor wafer, a process 23 in which the wafer is baked for ten or more minutes at a temperature of 680 deg.C or more is prepared before a start of a polysilicon growing process 22 after the wafer is put into a polysilicon growth device. H2, N2, or an inert gas such as He and Ar, for example, can be used in a gaseous atmosphere in the said wafer baking process 23.
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