| 摘要 |
PURPOSE:To enable a X-ray mask having high accuracy in dimension even in case of fine patterning to be obtained, by making an electrode film for plating composed of a material whose atomic number is smaller than that of a X-ray absorber. CONSTITUTION:In a X-ray exposure mask formed by a plating method of a X-ray absorber pattern 7', an electrode film 4 for plating is composed of an element whose atomic number is smaller than that of the element composing the X-ray absorbar 7'. Al, for example, as the electrode layer 4 for plating is evaporated on a pattern holding film 5 having a Si substrate frame 6, and followed thereon by a resin layer 3, an intermediate layer 2, and an electron-ray resist 1. Electron beam lithography is then performed to form a resist pattern 1', and the intermediate layer 2 is processed by dry etching with this resist serving as a mask, and further the resin layer 3 is processed with this intermediate layer serving as a mask. Successively, electrolytic plating of Au is performed to precipitate an absorber pattern on the exposed part of the electrode layer 4, and the electrode film 4 at the plating recessed part and at its direct lower part is removed to obtain a X-ray mask. |
