发明名称 |
SELECTIVE ETCHING OF THIN FILM |
摘要 |
PURPOSE:To enable a thin film pattern in mesa type section to be formed by a method wherein a step difference shaped resist pattern is used for dry etching process. CONSTITUTION:An aluminium evaporation film 2 is formed on a silicon substrate 1 while the first resist layer 4 and the second resist layer 5 are laminated. Next, the second resist layer 5 is shaped into a mesa type section by pattern- formation using collective exposure while the first resist layer 4 is shaped into a wide pattern with both sides thereof jutted out forming into step difference parts 6. finally, the aluminium evaporation film 2 is formed after the wide pattern of the first resist layer 4 by dryetching process then the first resist layer 4 is formed after the shape of the second sesist layer 5 into the mase type section and then the aluminium evaporation film 2 is also formed into the mesa type sectional pattern by further dryetching process.
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申请公布号 |
JPS62286230(A) |
申请公布日期 |
1987.12.12 |
申请号 |
JP19860130789 |
申请日期 |
1986.06.05 |
申请人 |
MATSUSHITA ELECTRONICS CORP |
发明人 |
TAWARA KEIZO |
分类号 |
H01L21/302;H01L21/027;H01L21/30;H01L21/3065 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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