发明名称 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
摘要 <p>PURPOSE:To control a Vpp pulse externally at the time of test or checking an operation margin by providing two MOS transistors (TRs) connecting a pad to a high-voltage generation circuit and giving complementary functions between its cross point and the pad and to circuits. CONSTITUTION:The pad 16 connected to apply a voltage externally is provided between a reference voltage source 1 and a RC circuit 3 and its cross point is used as a node B. Further, a 1st MOS TR 17 provided between the node B and the pad 16 and the 2nd MOD TR 18 provided between the node B and the reference voltage source 1 and functioning complementarily with the MOS TR 17 are provided. When the Vpp pulse is externally desired to control at the test, an H level signal is inputted to a gate of the MOS TR 17 and a L level signal is inputted to a gate of the MOS TR 18. Thus, the voltage inputted to a comparator 5 is a voltage fed to the pad 16 and the Vpp pulse voltage is a value obtained by dividing the voltage fed to the pad 16 by the voltage division ratio of a voltage divider 8.</p>
申请公布号 JPS62285298(A) 申请公布日期 1987.12.11
申请号 JP19860129668 申请日期 1986.06.04
申请人 MITSUBISHI ELECTRIC CORP 发明人 TERADA YASUSHI;NAKAYAMA TAKESHI;KOBAYASHI KAZUO;NOGUCHI KENJI
分类号 G11C17/00;G11C16/06 主分类号 G11C17/00
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