| 摘要 |
PURPOSE:To easily realize a TFT with its semiconductor thin film free of uneven thickness by a method wherein an n<+>-layer based on a-Si is formed on a semiconductor film by using a mask. CONSTITUTION:An electrode 12 is built on a transparent insulating substrate that may be a glass substrate 11. A process follows wherein a gate insulating film 13 is formed on the glass substrate 11 to cover the electrode 12. Further, on the gate insulating film 13, a semiconductor film 14 is formed, for example, of a-Si. The semiconductor film 14 is then so reduced in size that only a portion thereof is retained, larger than the gate electrode 12 and positioned over the same. After application by spincoating of a material withstanding a high temperature and suitable for finer patterning, etching is accomplished against the applied material for the formation of a mask 15 to cover a portion of the semiconductor film 14 over the gate electrode 12 and the circumference of the semiconductor film 14 on the gate insulating film 13. The mask 15 and the semiconductor film 14 are covered by an n<+>-layer 16, based on a-Si for example, and the mask 15 is exposed to an etchant for removal by the lift-off method for the retention of the n<+>-layer 16 based on a-Si on both sides of the semiconductor film 14. |
