| 摘要 |
PURPOSE:To allow light to directly enter a photoelectric transfer layer and there by to attain higher efficiency and sensitivity by a method wherein a P-type a-Si layer, l-type a-Si layers to serve as photoelectric conversion layers and an N-type a-Si layers are arranged in a planar linkage with each other, and the I-type a-Si layers serving as photoelectric conversion layers are built into a lamination of layers of different band gaps. CONSTITUTION:A P-type a-Si:H layer 15, I-type a Si:C and I-type a-Si:H photoelectric conversion layers 13 and 14, and an N-type a-Si:H layer 16 are arranged in a planar linkage with each other. incoming light is therefore allowed to enter the photoelectric conversion layers 13 and 14 without experiencing any attenuation. The photoelectric conversion layers 13 and 14 are built into a lamination wherein the thin films, made of materials wide or narrow in band gap, are alternately stacked up. All the carriers generated in a lamination of this design illuminatd with light travel into the layers of the narrow band gap, wherein their mobility in line with the planes of the layers is higher than under ordinary conditions. |
