| 摘要 |
PURPOSE:To surely form a pattern having a desired line width by lowering etching speed during the etching of a light shieldable film thereby extending the just etching time. CONSTITUTION:A blank 6 consists of a light transmittable substrate 7 composed of quartz glass and a light shieldable film 8 deposited on one main surface of the substrate 7. The light shieldable film 8 consists of chromium contg. chromium fluoride. The etching speed of the light shieldable film consisting of the chromium contg. chromium fluoride is lower than the etching speed of the light shieldable film consisting of only chromium. The etching during the etching of the light shieldable film 8 is lowered to extend the just etching time in the above-mentioned manner, by which the pattern of the desired line width is surely formed. The photomask is thus manufactured. |
