| 摘要 |
PURPOSE:To form a polycrystalline silicon thin-film having comparatively large particle size and excellent transistor characteristics without damaging the inside of a foundation insulating film by vaporizing evaporation-source silicon, depositing the evaporation-source silicon on an insulating film extremely thinly, ionizing and accelerating one part of the vaporized silicon and projecting one part of the silicon onto the film. CONSTITUTION:A P-type (100) silicon substrate 7 on which a thermal oxide film 11 in film thickness of 100nm is attached is chemically cleaned and inserted into a cluster ion beam device. A vacuum chamber is evacuated at pressure of 1X10<-4>Pa or less, the substrate 7 is heated at 500 deg.C, a crucible 1 filled with a silicon evaporation source 2 is heated, a shutter 6 is opened, and a film is formed for thirty sec at the rate of 10nm/min. A filament 4 is conducted, one part of silicon vapor is ionized by electron emission, 2KV voltage is applied to an electrode 5 and ions generated are accelerated, and the shutter 6 is opened again and the film is shaped for nine min and thirty sec, thus acquiring film thickness of 100nm.
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