| 摘要 |
A process for forming an anti-glare diode associated with a surface canal which consists in depositing a first layer of a dielectric material on a silicon substrate then depositing on this first layer a second polycrystalline silicon layer, etching by a photolithographic process the second silicon layer so as to bare the dielectric layer in two zones, a first zone defining the space for formation of the diode, a second zone defining a volume canal zone, a third zone defining the surface canal being protected by the remaining silicon, implanting impurities in the volume transfer canal zone and masking the volume transfer canal zone while leaving the zone reserved for the diode uncovered so as to bare the substrate in the zone reserved for the diode and depositing a second polycrystalline silicon layer on the whole formed by the bared part of the substrate, the second silicon layer and the dielectric and etching the second or both silicon layers so as to form the gate.
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