| 发明名称 |
Wide band gap semiconductor alloy material |
| 摘要 |
A wide band amorphous semiconductor alloy including a host matrix of silicon and incorporating therein carbon or nitrogen and a plurality of different and complimentary density of states reducing elements.
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| 申请公布号 |
US4710786(A) |
申请公布日期 |
1987.12.01 |
| 申请号 |
US19860872075 |
申请日期 |
1986.06.09 |
| 申请人 |
OVSHINSKY, STANFORD R.;MADAN, ARUN |
发明人 |
OVSHINSKY, STANFORD R.;MADAN, ARUN |
| 分类号 |
H01L21/205;H01L29/04;H01L31/20;H01L45/00;(IPC1-7):H01L45/00 |
主分类号 |
H01L21/205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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