| 摘要 |
PURPOSE:To prevent the pollution due to impurities at a time of sealing and to obtain high-quality compd. semiconductor crystal by allowing a cap for sealing an ampule to remain on standby in a chamber of an exhaust system and fitting the cap to the ampule after vacuum baking. CONSTITUTION:A raw material 2 such as P is introduced into the bottom of an ampule 1 and the raw material 4 such as In is introduced into a crucible 3 set in the middle part of the ampule 1, and this ampule 1 is fitted to a vacuum exhauster 5 and a furnace 6 for vacuum baking. A cap 7 for sealing the ampule is fitted to a hook 10 in a chamber of a vacuum exhaust system and the inside of the ampule 1 is evacuated in such a state that a shutter 8 for preventing cap pollusion is closed. The raw material 2, 4 introduced into the ampule 1 are held at prescribed temp. and vacuum baking is performed. The shutter 8 is opened and the cap 7 is descended to the prescribed position of the ampule 1 and the outside of the ampule 1 positioned around the cap 7 is heated and melted by a oxyhydrogen burner to seal the ampule 1.
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