| 摘要 |
PURPOSE:To obtain a semiconductor device, in which deterioration of electric characteristics is prevented and the reliability of elements can be improved, by forming a contact hole, thereafter implanting high concentration oxygen ions so that a peak is provided in an n<+> diffused layer in source and drain regions, performing heat treatment, and forming an insulating film at a part in the n<+> diffused layer by activation. CONSTITUTION:A field oxide film 2 is formed on a p-type silicon substrate 1. A gate oxide film 3 is formed on the surface of an island shaped substrate region, which is isolated by the field oxide film, by thermal oxidation. Patterning is performed, and a gate electrode 4 is selectively formed on the gate oxide film 3. Then, with the gate electrode 4 and the field oxide film 2 as masks, activation and diffusion are performed, and n<+> source and drain regions 5 and 6 are formed. Thereafter, a BPSG film 8 is deposited, and first insulating films 7 and 8 in a double-layer structure are formed. With the first insulating films 7 and 8 and the gate oxide film 3 as masks, oxidizing impurity ions are implanted. Then high temperature heat treatment is performed. Activation is carried out, and an insulating film is formed in a part of the source and drain regions 5 and 6.
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