| 摘要 |
PURPOSE:To obtain a laser oscillated using independent wavelengths of two kinds by forming active layers of two kinds through independent two times of crystal growth. CONSTITUTION:A P-type InP clad layer 12, a GaInAsP active layer 13 and an N-type InP clad layer 14 are shaped onto a P-type InP substrate 11, and grooves 15, 15 holding a mesa stripe 15a in narrow width and a groove 16 holding a mesa stripe 16a in broad width between the grooves 15 are formed through etching. When N-type InP clad layers 17, a GaInAsP active layer 18 and a P-type InP clad layer 19 are shaped, only the clad layer 19 is formed onto the stripe 15a. Grooves 20, 20 reaching the substrate are shaped to groove 15, 15 forming sections, and the insides of the grooves are buried with insulating materials 21, 21. Consequently, the active layer 13 in the stripe 15a and the active layer 18 shaped in the groove 16 function as laser oscillation sections. The active layers 13, 18 are formed independently, thus manufacturing two kinds of semiconductor lasers 24, 25 having independent oscillation wavelengths on the same substrate. |
