| 摘要 |
PURPOSE:To modulate a MOS-FET drain current by constituting the titled circuit by a MOS-FET and a device applying a magnetic field perpendicular to a gate electrode face. CONSTITUTION:A magnet N pole is placed to a gate electrode and a magnet S pole is placed to the side of a P-channel semiconductor to apply a magnetic field H perpendicular to the gate electrode face of an N-channel MOS-FET. Without the magnetic field H, an electron 11 runs from an n<+> source diffusion region 3 to an n<+> drain diffusion region 2 along a path 14. On the other hand, when the magnetic field H exists, the running electron receives the force in an orthogonal direction in the running direction and in the magnetic field direction, draws a circular arc as shown in the path 15 and the raidus of the circular arc is decreased more as the magnetic field gets stronger. In applying the magnetic field H is such way, the gate length in equivalently increased, the drain current decreased and the MOS-FET whose drain current is modulated by the magnetic field is obtained.
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