| 摘要 |
PURPOSE:To enable high electrostatic strength by connecting at least one or more of input exclusive terminals in external terminals to a transistor for an output in blocks for input/output previously arranged into a substrate. CONSTITUTION:An input terminal 11 connected to the outside of a device is connected to gates of transistors 15, 16 for an input buffer, and also connected to drains of transistors 19, 20 for an output buffer. Since the input terminal 11 is used as an input exclusive terminal, gate electrodes of each transistor are each connected to VDD 13 and GNDs 14 so that the transistors 19, 20 for the output buffer are brought to an OFF state. Since an output terminal 12 to an internal block for the input buffer is outputted at the same phase as an input level, two inverters constituted of transistors 15, 16 and 17, 18 for the input buffer are connected in series. Accordingly, electrostatic strength is increased largely. |
