| 摘要 |
PURPOSE:To find the more accurate maximum value of a current strictly, by performing the measurement of a power source current by a chip select mode, or performing the measurement of the power source current of a semiconductor memory device by setting a mode in a chip non-select mode, after the readout operation of a cell data, and the write operation of the inverted data of the cell data for all of the addresses are performed. CONSTITUTION:First of all, a power source is turned OFF(off)1, and afterwards, the power source is turned ON(on)2, and the semiconductor memory device is set at a chip select mode A, then an operation state 3 is set. One address in all address spaces is accessed, and the data of a memory cell is read out, and the write operation 4 that is the write of the inverted data of the above data is performed for all of the addresses, and after completing an operation 5, the measurement of the power source current is performed. Furthermore, the semiconductor memory device is set at a chip non-select mode B, and is is set at a standby state 7, then the measurement 8 of the power source current is performed.
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