| 摘要 |
<p>An infrared imager (10) for sensing infrared radiation. The imager (10) comprises a detection layer (14) of semiconductor material which is operable to detect the occurence of infrared radiation and generate free charge carriers in response thereto. The imager (10) also includes a transfer layer (16) which is operable to generate a signal in response to the infrared radiation generated by the detection layer (14) and deliver the signal to the output of the imager (10). An electropotential barrier (18) is located within the imager (10) to selectively restrict migration of free charge carriers from the detection layer (14) to the transfer layer (16). The imager (10) includes a buried channel (49) and is capable of two color operation.</p> |
