发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
A dynamic random access memory is disclosed which has memory cell units formed on a silicon substrate, each of which includes four memory cells, each of these including a MOS transistor and a MOS capacitor. One cell unit occupies a substantially square area of the surface of the substrate. The four memory cells included in this cell unit are arranged along the diagonal lines of the square area in the shape of a cross. The four transistors are connected to a common drain through a common drain region. The capacitors are respectively arranged at the four corners of the square area so as to have a relatively increased capacitor area, thereby obtaining a large capacitance. |
申请公布号 |
DE3374103(D1) |
申请公布日期 |
1987.11.19 |
申请号 |
DE19833374103 |
申请日期 |
1983.07.20 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SAKUI, KOJI;OGURA, MITSUGI |
分类号 |
G11C11/401;H01L21/8242;H01L27/10;H01L27/108;H01L29/78;(IPC1-7):H01L27/10;G11C11/24 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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