| 摘要 |
PURPOSE:To improve the manufacturing yield of a semiconductor device by connecting capacitor electrodes between a plurality of semiconductor elements to prevent the elements from electrostatical breakdown. CONSTITUTION:Capacitor electrodes 3 are formed in a continuous meshlike pattern in each block 16, and the electrodes 3 of each block 16 are electrically integrally connected therebetween through a connecting pattern 17. Further, the capacitor electrodes 3 of the whole chip 12 are electrically integrally connected therebetween through a connecting pattern 18. The pattern 18 is so formed as to exist on the scribing line of a wafer. Thus, even when the electrodes 3 are charged in the step after the electrodes are formed so that the thin dielectric film is electrostatically broken down, the capacitor to be broken down is only one weakest capacitor in the wafer, and the other capacitors are protected from the electrostatic breakdown. |
