| 摘要 |
PURPOSE:To prevent an intermediate layer from warping due to the difference in thermal expansion coefficient by a method wherein the intermediate layer with matching lattice constant divided into small sections to relieve the thermal strain is provided on a crystalline insulator substrate while P type and N type GaAs are formed by vaporgrowth on the intermediate layer. CONSTITUTION:An intermediate layer with matching lattice constant e.g. a fluoride thin film 2 is provided on a crystalline insulator substrate 1 such as a silicon surface by vacuum evaporation and devied into sections in width of e.g. 50-30.000mum square. Next, the Si surface provided with the divided fluoride is mounted on a molecular beam epitaxy equipment and after heating and purifying the surface, a GaAs film 4 is formed by growing a P type GaAs and then N type GaAs. Finally, after patterning and forming an Au electrode, the GaAs film 4 is connected to a driver by wire bonding to emit light from upper part of element. Through these procedures, a compact photoprinter head subject to no warping can be manufactured at low cost. |
