发明名称 METHOD FOR ETCHING PROCESSING OF PARTIAL GLAZE SUBSTRATE
摘要 PURPOSE:To easily form a conductor pattern, by etching a partial glaze layer through a resist pattern having a second pattern covering a heat dissipating substrate and the partial glaze layer inclusive of the boundary region of both of them. CONSTITUTION:When a conductor pattern is formed to the entire surface of the boundary region of an alumina substrate 11 and a partial glaze layer 12, a partial glaze alumina substrate 10 is washed and, thereafter, an org. resist is applied to the entire surface thereof by spin coating, and exposure and development are applied to said resist to form a resist pattern 13. This resist pattern 13 has a first pattern 13a covering the island-shaped protruded part forming scheduled region of the top part of the partial glaze layer 12 and a second pattern 13b covering the alumina substrate 11 and the partial glaze layer 12 inclusive of the boundary region of both of them. Subsequently, in order to enhance the chemical resistance of the org. resist, baking is performed. Succeedingly, the whole is immersed in hot phosphoric acid to apply etching to the partial glaze layer 12 through the resist pattern 13. Therefore, the generation of the undercut or etching residue in the boundary region is avoided.
申请公布号 JPS62259875(A) 申请公布日期 1987.11.12
申请号 JP19860103028 申请日期 1986.05.07
申请人 OKI ELECTRIC IND CO LTD 发明人 TSURUOKA TAIJI;ANASAKO KENICHI;TAGAMI TOSHIO;NIWA SAEKO
分类号 B41J2/335 主分类号 B41J2/335
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