| 摘要 |
PURPOSE:To perform ion implantation uniformly and with good accuracy even when the incidence angle of the beam becomes large by changing scanning frequency in accordance with an irradiated position by the ion beam in an ion implantation device of an ion beam scanning type. CONSTITUTION:An ion beam 10 from an ion source 1 is scanned by deflection electrodes 3 in the X direction and deflection electrodes 4 in the Y direction to irradiate a sample substrate 6 for implanting impurity ions. In this case, according to the irradiated position on the sample substrate 6 scanning frequency at least either in the horizontal direction or in the vertical direction is altered by the scanner 5. Thus the change of ion distribution depending on the distance to the surface of the sample substrate 6 covered by the ion beam 10 is compensated. It is therefore made possible to perform uniform ion implantation on the overall surface. Accordingly, even when impurities are implanted on the side wall of the sample substrate 6 having a grooved construction, ion implantation can be performed with uniformity and good controllability.
|
