| 发明名称 |
Method for fabricating bipolar transistor in integrated circuit |
| 摘要 |
In a method for fabricating a bipolar transistor in accordance with the present invention, a base electrode (9a) of metal silicide is formed being separated from an emitter region (7) only by the thickness of a double-layered insulator film (109, 203).
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| 申请公布号 |
US4705599(A) |
申请公布日期 |
1987.11.10 |
| 申请号 |
US19860900444 |
申请日期 |
1986.08.26 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
SUDA, KAKUTARO;HIRAO, TADASHI |
| 分类号 |
H01L29/73;H01L21/285;H01L21/331;H01L21/60;H01L21/768;H01L29/732;(IPC1-7):H01L21/306;B44C1/22;C03C15/00;C03C25/06 |
主分类号 |
H01L29/73 |
| 代理机构 |
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