| 摘要 |
PURPOSE:To increase the allowable voltage for static electricity of a protective element without degrading the high integration of a semiconductor device by a method wherein a static electricity discharging part is provided in a space between an input or output terminal and an earth of a semiconductor device while a resistor is further formed in a land region similar to the land region wherein the static electricity discharge part is formed. CONSTITUTION:A resistant element 12, a bipolar transistor 11 and a resistor 13 are formed in a land region 1 insulated from ambient areas by p<+>type insulating layers 14. In the land region 1, the resistor 13 as an n<+>type buried layer is formed between a p type semiconductor substrate 114 and an n type epitaxial layer 113 to be inserted into the space between an input terminal 2 and the first stage input terminal 3. Through these procedures, the allowable voltage for static electricity of a protective element can be increased. |
