| 摘要 |
PURPOSE:To improve the heat resistance of a resist film and to prevent flowing in the stage of dry etching by coating the resist film on an Al wiring film on a semiconductor substrate and forming patterning thereon, then irradiating electron rays to the pattern. CONSTITUTION:The Al wiring film 11 is coated on the Si substrate 12. The novolack positive type resist film 13 is coated thereon and is patterned by irradiating UV rays thereto by using a photomask. The electron rays 14 are then irradiated to the resist film 13 and thereafter, the film is baked. The melting and flowing of the resist film 13 at, for example, 190 deg.C, are obviated. Since the heat resistance of the resist film is improved by irradiating the electron rays thereto, the flowing at the time of dry etching is obviated and the etching with high accuracy is executed. |
