| 摘要 |
PURPOSE:To enable reducing an astigmatic difference by increasing the reflectivity of laser light on the curved wave surface of a fundamentally horizontal transverse mode and by reducing the above-mentioned reflectivity in a region where the fundamentally horizontal transverse mode is near a plane wave. CONSTITUTION:An n-GaAs semiconductor block layer 2 is formed on a p-GaAs semiconductor substrate 1 except a channel region, then a clad layer 3 which is a p-GaAlAs semiconductor optical confinement layer, an (n) or (p) or undope GaAlAs semiconductor active layer 4, a clad layer 5 which is an n-GaAlAs semiconductor optical confinement layer and an n-GaAs semiconductor cap layer 6 are formed in sequence by a well known method and at last, an electrode 7 is provided on the face of the n-GaAs semiconductor cap layer 6 and on the rear of the p-GaAs semiconductor substrate 1 each by evaporation. In this case, the thickness of the semiconductor clad layer 3 is made 0.4mum to cause pulsation. The size of a light emitting region 10 provided on a protection film 9 is made equal to or less than the width of a channel in the horizontal direction for junction and at least equal to or more than the thickness of the semiconductor active layer 4 in the vertical direction for junction and the center of the light emitting region 10 is set to a position where laser light intensity is made maximum.
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