| 摘要 |
PURPOSE:To form a silicon nitride film having a low hydrogen content and satisfactory insulating characteristics at a low temp. by using a silicon hydride compound having an Si-N bond in one molecule as gaseous starting material. CONSTITUTION:A silicon hydride compound having an Si-N bond in one molecule is introduced into a vacuum vessel as a reactive gas and plasma is generated. Molecules in the plasma are activated and brought into a reaction on a substrate to form a thin film. Aminosilane represented by a general formula HnSi(NH2)4-n (where n=1, 2 or 3) may be used as the reactive gas. By this method, an insulating thin film having a low S-N, high specific resistance and high mechanical strength is obtd.
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