| 发明名称 |
SEMICONDUCTOR DEVICE HAVING A CONDUCTIVE LAYER CONSISTING OF A HIGH-MELTING POINT METAL SILICIDE AND A METHOD FOR MANUFACTURING SUCH A SEMICONDUCTOR DEVICE |
| 摘要 |
There is proposed a semiconductive device comprising a conductive layer (4) consisting of a high-melting point metal silicide having a formula MSix (wherein M is a high-melting point metal and x is a value falling within 2.0 < x </= 4.0). Said conductive layer (4) has a sheet resistance of not more than 5 OMEGA / &squ& . A method for manufacturing said semiconductor device is also proposed. Said method comprises the step of depositing on a semiconductor substrate (1) through an insulating film (2) a metal silicide film (4) having the formula MSix, and annealing the metal silicide film (4). |
| 申请公布号 |
DE3373954(D1) |
申请公布日期 |
1987.11.05 |
| 申请号 |
DE19833373954 |
申请日期 |
1983.07.05 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
OKUMURA, KATSUYA;KAWAGUCHI, TATSUZO |
| 分类号 |
H01L21/3205;H01L23/52;H01L23/532;H01L29/423;H01L29/43;H01L29/49;H01L29/78;(IPC1-7):H01L23/52;H01L29/40 |
主分类号 |
H01L21/3205 |
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