Complementary semiconductor device structure and its production.

摘要

Semiconductor integration employing different devices on the same substrate (1) in areas of higher (3) and lower (2) crystallographic index planes provides device advantages in ability to integrate both p type and n type devices together and to achieve both types with a single epitaxial layer. An integrated complementary device circuit is provided with a GaAs substrate with a p type device having a hole gas (25) as a carrier mechanism and an n type device having an electron gas (27) as a carrier mechanism.