| 摘要 |
PURPOSE:To improve the close-contacting property between a polycrystalline silicon film and a silicide film as well as to enable to stabilize the electric characteristics of the titled semiconductor device by a method wherein a silicide film is formed using a plurality of kinds of high melting point metal and silicon. CONSTITUTION:A silicide film 6 is formed by the alloy wherein a high melting point metal such as titanium, for example, is mixed to a molibdenum-silicide film or tungsten-silicide film. If the silicide film 6 is formed in the state wherein other high melting point metal such as titanium and the like, for example, is contained when the silicide film such as themolybdenum-silicide film, and the tungsten-silicide film and the like are formed, the close-adhesive property between the titanium-silicide film in the molybdenum-silicide film and silicon of the molybdenum-silicide film is increased, and action with which the internal stress and distortion due to heat treatment is created. Also, the resistance of the silicide film 6 can be reduced by adding titanium. |
