| 摘要 |
PURPOSE:To largely reduce the irregularity of the thickness of a film grown on a wafer by providing a manifold board having discharge hole at the top between a susceptor and a bell-jar, and providing a partition plate having a gas supply hole at the top of the susceptor. CONSTITUTION:A susceptor 28 which can simultaneously place a plurality of wafers is provided in a bell-jar 21, a manifold board 33 having discharge hole 32 at the top is provided between the end of the susceptor 28 and the inner wall of the bell-jar 21, and a partition plate 42 having a plurality of small gas supply holes 41 is provided at the top of the susceptor 28. According to this, gas introduced from above the bell-jar 21 is supplied through the holes 41 of the plate to a wafer 30 on the susceptor 28, and then exhausted through a discharge hole 29 of the susceptor 28 and the discharge hole 32 of the manifold board. Accordingly, the gas uniformly flows in the bell-jar to reduce the irregularity of processing a plurality of wafers and the thickness of the film.
|
