| 发明名称 |
Fabrication process for EPROM cells with oxide-nitride-oxide dielectric. |
| 摘要 |
<p>The process calls for covering of the dielectric (6) with a thin additional layer of polysilicon (10) which has the function of protecting the dielectric from any defects which would otherwise be introduced from the subsequent masking.</p> |
| 申请公布号 |
EP0243999(A2) |
申请公布日期 |
1987.11.04 |
| 申请号 |
EP19870200615 |
申请日期 |
1987.04.02 |
| 申请人 |
SGS MICROELETTRONICA S.P.A. |
发明人 |
GHIDINI, GABRIELLA;CRISENZA, GIUSEPPE |
| 分类号 |
H01L21/8247;H01L21/28;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8247 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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