| 摘要 |
PURPOSE:To accelerate a time required for a pattern lithography by the magnification in response to the number of divisions by scanning beams divided into a plurality on a material on the basis of a lithography position data, and drawing a pattern. CONSTITUTION:A beam is focused on a grid electrode 6 by a lens 5. Most of the beams avoids the electrode 6 itself, to which a voltage is applied, and passes holes 6a, 6b. The beams Ea, Eb are axially matched to the centers of object ranges 8a, 8b by alignment coils 7a, 7b, and focused on a material 9 by the lens. The beams Ea', Eb' passed through diaphragms 14a, 14b are scanned on a pattern lithography position (region) by means of deflectors 9a, 9b operated on the basis of a beam position designation signal from a controller 3.
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