| 摘要 |
PURPOSE:To maintain the superconductive characteristic of a thin Be film which is made amorphous or finely crystallized even if said film is exposed to a room temp. by sputtering a Be target by an ion beam of an inert material, etc. in a vacuum thereby forming said film on a substrate. CONSTITUTION:The inside of a vacuum vessel 1 is evacuated to a prescribed degree of vacuum by operating an evacuating system 9 and the inert material such as Ar is conducted from a gas supply source 5 to the inside of an ion generator 2a. The generator 2a is operated to bombard the surface of the Be target 3 by the ion beam of Ar or the atomic ray. Part of the Be atoms driven out by the high-velocity Ar ion beam or atomic ray are deposited atop the insulating or conductive substrate 4 of which the surface is opposed to the surface of the target 3 in parallel with each other. The thin superpconductive Be film which is made amorphous or finely crystallized is thus formed. The ion beam or atomic ray of Ar from another ion generator 2b is preferably irradiated to the thin Be film formed on the substrate 4 by the above-mentioned procedure. |
