| 摘要 |
PURPOSE:To remarkably reduce cracks and crazes in a magnetic substrate by properly managing H density of a magnetic thin film depositing atmosphere. CONSTITUTION:H2 partial pressure in a sputtering atmosphere is set at 10<-10> Torr or lower to reduce H atoms introduced into a magnetic thin film 1. After a Sendust film 1 is formed on a ferrite substrate 2, its temperature is returned to room temperature. Then, a compression stress to make it convex on the side of the film 1 is generated. When it is heated up to 600 deg.C, the stress is increased. When held at 600 deg.C, H atoms are less in the Sendust film. Thus, a dislocation of the Sendust film hardly occurs, and the stress is scarcely alleviated or, even if the stress is moderated, its value is small. When returned to room temperature, since the stress moderation in the case where it is held at 600 deg.C is small, the substrate 2 substantially becomes of a flat state to be returned to the original state.
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