METHOD FOR ETCHING SILICON LAYER ON SILICON CARBIDE

摘要

PURPOSE:To selectively dry-etch only the Si layer of a substrate having a two- layered structure consisting of SiC and Si by etching the surface of the substrate in an etching atmosphere having no vertical principal accelerating component. CONSTITUTION:An Si layer is deposited on the surface of SiC and only the Si layer of the resulting substrate is selectively dry-etched. At this time, a barrel type plasma etching apparatus, a laser etching apparatus or like is used and a dry etching method by which ions of an etching gas are not vertically accelerated on the surface of the substrate is adopted. Thus, only the Si layer can be finely processed by chemical etching without damaging the SiC.