| 摘要 |
PURPOSE:To reduce both threshold voltage and leakage currents by bringing only a section in the vicinity of a gate oxide film in a channel forming region to the same conductivity type as a source region and a drain region and bringing other sections to a reverse conductivity type. CONSTITUTION:An oxide film formed onto an Si substrate is used in an insulating substrate 1, and a channel forming region 2, a source region 3 and a drain region 4 are shaped into a polysilicon thin-film on the insulating substrate 1. A gate electrode 8 is formed onto the channel forming region 2 through a gate oxide film 5, and a field oxide film 6, a source electrode 7 and a drain electrode 9 are shaped. The channel forming region 2 is formed from two regions of an n-type channel surface 12 shaped to a section in the vicinity of the gate oxide film 5 and a p-type channel lower region 11 formed to a section except the n-type channel surface 12. |
