| 摘要 |
PURPOSE:To ensure a uniform thickness for a thin film to be formed by the CVD method on a semiconductor wafer by a method wherein the surface of a specimen bed is formed into a recess or projection to meet a warpage to be generated in a semiconductor wafer because of said film. CONSTITUTION:When an SiO2 film 10 is deposited on a silicon wafer 4 by means of the CVD method, the silicon wafer 4 and a specimen bed 3 are in contact with each only along the circumference prior to the beginning of the CVD method. During the application of the CVD method, however, a warpage is generated in the silicon wafer 4 because of the tensile stress exerted by the SiO2 film 10, when the silicon wafer 4 will come to lie roughly along the concave on the surface of the specimen bed 3. This ensures an approximately equal temperature across the entirety of the silicon wafer 4, which in turn ensures a uniform CVD speed for the entirety of the SiO2 film 10. In this way, a uniform thickness may be ensured for the entirety of the CVD-produced SiO2 film 10.
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