发明名称 FORMATION OF RESIST LAYER ON SUBSTRATE
摘要 PURPOSE:To form a resist layer having excellent uniformity and denseness on a substrate by raising the level of the liquid formed with a monomolecular resist layer film on the liquid surface by the principle of a communicating pipe and thereafter lowering the same. CONSTITUTION:A wafer 5 is set and the monomolecular resist layer film 1 is extended. A compressed gas is fed into a top space 11a of the 2nd vessel 11 by gradually opening a valve 16 to act the pressure on the liquid surface 13b. The liquid surface 13b lowers and the liquid surface 13a is raised via the communicating pipe 12. The monomolecular resist layer film 1 rises as well together with the liquid surface 13a. The gas in the top space 11a is thereafter opened to the atm., then the liquid surface 13b rises and the liquid surface 13a descends and the wafer 5 is relatively removed from the liquid surface 13a. The microoscillation of the monomolecular resist layer film on the liquid surface and the fall of dust are then eliminated and the resist layer is formed with good reliability.
申请公布号 JPS62247860(A) 申请公布日期 1987.10.28
申请号 JP19860090348 申请日期 1986.04.18
申请人 FUJITSU LTD 发明人 ONO YOSHINOBU
分类号 B05C3/02;B05C3/109;B05D1/20;G03F7/16;H01L21/027;H01L21/30 主分类号 B05C3/02
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